Posts: 15,064
Threads: 9,794
Thanks Received: 9,134 in 7,286 posts
Thanks Given: 9,994
Joined: 12 September 18
28 February 19, 08:26
Quote:![[Image: samsung-ufs-30-678_678x452.jpg]](https://images.anandtech.com/doci/14036/samsung-ufs-30-678_678x452.jpg)
Samsung this week said that it has begun mass production of its UFS 3.0 chips. The company’s initial lineup of UFS 3.0 products includes embedded drives featuring a 128 GB and a 512 GB capacity. The company plans to introduce 256 GB and 1 TB versions of its UFS 3.0 devices sometimes in the second half of this year, and we have already seen that the 512 GB edition will appear in the Samsung Galaxy Fold. Perhaps it is a shame that the chip is only just entering mass production, and missed the window for the Samsung Galaxy S10 family.
Samsung’s UFS 3.0 storage drives use the company’s 5th generation 96-layer V-NAND memory as well as a proprietary controller supporting a UFS 3.0 HS Gear 4 two-lane interface. The 512 GB version uses eight 64 GB 96L V-NAND devices, whereas the 128 GB flavor uses two of them.
When it comes to performance, Samsung says that its 512 GB UFS 3.0 embedded flash drive features a sequential read speed of up to 2100 MB/s, a sequential write speed up to 410 MB/s, and 68,000/63,000 read/write IOPS. When compared to SATA SSDs, the 512 GB UFS 3.0 device offers four times higher sequential reads, but is slightly slower as far as write and random performance numbers are concerned.